PJD09N03

www.DataSheet4U.com PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES RDS(ON), VGS@10V,IDS@30A=9mΩ RDS(ON), [email protected],IDS@30A=12mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA Case: TO-252 Molded Plastic Terminals : Solderable per MIL-STD-202,Method 208 Marking : 09N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RθJ C RθJ A Li mi t 25 +20 50 240 45 26 -5 5 to + 1 5 0 130 2 .8 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-MAY.29.2006 PAGE . 1 P...