N-Channel Enhancement Mode MOSFET
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PJD15N06L
60V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@10A=40mΩ • ...
Description
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PJD15N06L
60V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
RDS(ON), VGS@10V,IDS@10A=40mΩ RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
Case: TO-252 Molded Plastic Terminals : Solderable per MIL-STD-750D,Method 1036.3 Marking : 15N06L
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt
1)
S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA
Li mi t 60 +20 15 60 38 22 -5 5 to + 1 5 0 120 3 .3 50
U ni t s V V A A W
O
M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=21A, VDD=30V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2
C
mJ
O
C /W C /W
O
Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
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PJD15N06L
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