Document
Applications l High Efficiency Synchronous Rectification
in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness l Fully Characterized Capacitance and
Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free
IRFB3206PbF IRFS3206PbF IRFSL3206PbF
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
60V
2.4m: 3.0m:
cG ID (Silicon Limited) 210A
S ID (Package Limited) 120A
D
D D
DS G
TO-220AB IRFB3206PbF
G Gate
DS G
D2Pak IRFS3206PbF
D Drain
DS G
TO-262 IRFSL3206PbF
S Source
Base Part Number
IRFB3206PbF IRFSL3206PbF IRFS3206PbF
Package Type
TO-220 TO-262 D2Pak
Standard Pack
Form
Tube
Tube Tube Tape and Reel Left Tape and Reel Right
Quantity
50
50 50 800 800
Orderable Part Number
IRFB3206PbF IRFSL3206PbF IRFS3206PbF IRFS3206TRLPbF IRFS3206TRRPbF
Absolute Maximum Ratings Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy
Thermal Resistance
RθJC RθCS RθJA RθJA
Symbol
Parameter
kJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
210 150
120 840 300 2.0 ± 20 5.0 -55 to + 175
300
x x10lb in (1.1N m)
170 See Fig. 14, 15, 22a, 22b,
Typ. ––– 0.50 ––– –––
Max. 0.50 ––– 62 40
Units
A
W W/°C
V V/ns
°C
mJ A mJ Units
°C/W
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
60 ––– ––– 2.0 ––– –––
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
––– –––
RG Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
210
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.07 2.4 ––– ––– ––– ––– ––– 0.7
Typ. ––– 120 29 35 85 19 82 55 83 6540 720 360 1040 1230
Max. Units
Conditions
––– ––– 3.0 4.0 20 250 100 -100 –––
V VGS = 0V, ID = 250μA
dV/°C Reference to 25°C, ID = 5mA gmΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 150μA μA VDS =60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C nA VGS = 20V
VGS = -20V
Ω
Max. Units
Conditions
––– S VDS = 50V, ID = 75A 170 nC ID = 75A ––– VDS =30V
gVGS = 10V
––– ID = 75A, VDS =0V, VGS = 10V ––– ns VDD = 30V ––– ID = 75A ––– RG =2.7Ω
g––– VGS = 10V
––– pF VGS = 0V ––– VDS = 50V ––– ƒ = 1.0MHz, See Fig.5
i––– VGS = 0V, VDS = 0V to 48V , See Fig.11 hÖ–– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 210 A MOSFET symbol
––– ––– 840
showing the A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 75A, VGS = 0V
––– 33 50 ns TJ = 25°C
VR = 51V,
––– 37 56
TJ = 125°C
––– 41 62 nC TJ = 25°C
gIF = 75A
di/dt = 100A/μs
––– 53 80
TJ = 125°C
––– 2.1 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D S
Notes:
Calculated continuous current based on maximum allowable junction ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current
Pulse width ≤ 400μs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
Repetitive rating; pulse width limited by max. junction t.