DatasheetsPDF.com

IRFS3206PBF Dataheets PDF



Part Number IRFS3206PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFS3206PBF DatasheetIRFS3206PBF Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 60V 2.4m: 3.0m: cG ID (Silicon Lim.

  IRFS3206PBF   IRFS3206PBF



Document
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 60V 2.4m: 3.0m: cG ID (Silicon Limited) 210A S ID (Package Limited) 120A D D D DS G TO-220AB IRFB3206PbF G Gate DS G D2Pak IRFS3206PbF D Drain DS G TO-262 IRFSL3206PbF S Source Base Part Number IRFB3206PbF IRFSL3206PbF IRFS3206PbF Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 50 800 800 Orderable Part Number IRFB3206PbF IRFSL3206PbF IRFS3206PbF IRFS3206TRLPbF IRFS3206TRRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy Thermal Resistance RθJC RθCS RθJA RθJA Symbol Parameter kJunction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak Max. ™210 ™150 120 840 300 2.0 ± 20 5.0 -55 to + 175 300 x x10lb in (1.1N m) 170 See Fig. 14, 15, 22a, 22b, Typ. ––– 0.50 ––– ––– Max. 0.50 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 60 ––– ––– 2.0 ––– ––– IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– RG Internal Gate Resistance ––– Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. gfs Forward Transconductance 210 Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) hEffective Output Capacitance (Time Related) ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.07 2.4 ––– ––– ––– ––– ––– 0.7 Typ. ––– 120 29 35 85 19 82 55 83 6540 720 360 1040 1230 Max. Units Conditions ––– ––– 3.0 4.0 20 250 100 -100 ––– V VGS = 0V, ID = 250μA dV/°C Reference to 25°C, ID = 5mA gmΩ VGS = 10V, ID = 75A V VDS = VGS, ID = 150μA μA VDS =60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω Max. Units Conditions ––– S VDS = 50V, ID = 75A 170 nC ID = 75A ––– VDS =30V gVGS = 10V ––– ID = 75A, VDS =0V, VGS = 10V ––– ns VDD = 30V ––– ID = 75A ––– RG =2.7Ω g––– VGS = 10V ––– pF VGS = 0V ––– VDS = 50V ––– ƒ = 1.0MHz, See Fig.5 i––– VGS = 0V, VDS = 0V to 48V , See Fig.11 hÖ–– VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ãd(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ton Forward Turn-On Time Min. Typ. Max. Units Conditions ™––– ––– 210 A MOSFET symbol ––– ––– 840 showing the A integral reverse G ––– ––– 1.3 p-n junction diode. gV TJ = 25°C, IS = 75A, VGS = 0V ––– 33 50 ns TJ = 25°C VR = 51V, ––– 37 56 TJ = 125°C ––– 41 62 nC TJ = 25°C gIF = 75A di/dt = 100A/μs ––– 53 80 TJ = 125°C ––– 2.1 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D S Notes:  Calculated continuous current based on maximum allowable junction „ ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. temperature. Bond wire current limit is 120A. Note that current … Pulse width ≤ 400μs; duty cycle ≤ 2%. limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time some lead mounting arrangements. as Coss while VDS is rising from 0 to 80% VDSS. ‚ Repetitive rating; pulse width limited by max. junction t.


IRFB3206PBF IRFS3206PBF IRFSL3206PBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)