IRFSL3207

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96893C IRFB3207 IRFS3207 IRFSL3207 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 3.765mV: 4.5m: 180A GDS TO-220AB IRFB3207 GDS D2Pak IRFS3207 GDS TO-262 IRFSL3207 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dV/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak www.irf.com Max. ™180 ™130 720 330 2.2 ± 20 5.8 -55 to + 175 300 x x10lb in (1.1N m) 910 See Fig. 14, 15, 16a, 16b, Typ. ––– 0.50 ––– ––– Max. 0.45 ––– 62 40 Un...