IGBT
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PD - 97059B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and E...
Description
www.DataSheet4U.com
PD - 97059B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
l
IRGB4065PbF IRGS4065PbF
Key Parameters
300 1.75 205 150 V V A °C
VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c T J max
C
C
C E C G
D2Pak IRGS4065DPbF
G E
E C G
n-channel
TO-220 IRGB4065DPbF
G Gate
C Collector
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
±30 70 40 205 178 71 1.4 -40 to + 150 300
Units
V A
c
W W/°C °C
10lb ...
Similar Datasheet
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