NTGS4111P

www.DataSheet4U.com NTGS4111P Power MOSFET −30 V, −4.7 A, Single P−Channel, TSOP−6 Features Leading −30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications Surface Mount TSOP−6 Package Saves Board Space Improved Efficiency for Battery Applications Pb−Free Package is Available http://onsemi.com V(BR)DSS −30 V RDS(on) TYP 38 mW @ −10 V 68 mW @ −4.5 V P−Channel 1 2 5 6 ID MAX −4.7 A Applications Battery Management and Switching Load Switching Battery Protection MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady TA = 25°C State TA = 85°C t≤5s Power Dissipation (Note 1) TA = 25°C PD Steady TA = 25°C State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady TA = 25°C State TA = 85°C TA = 25°C tp = 10 ms ID Symbol VDSS VGS ID Value −30 ±20 −3.7 −2.7 −4.7 1.25 2.0 −2.6 −1.9 PD IDM TJ, TSTG IS TL 0.63 −15 −55 to 150 −1.7 260 W A °C A °C TG M Unit V V A 4 3 W MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 6 5 4 A 1 TSOP−6 CASE 318G STYLE 1 TG M G G 1 2 3 Drain Drain Gate = Specific Device Code = Date Code* = Pb−Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) G THERMAL RESISTANCE RATINGS Rating Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t ≤ 5 s (Note 1) Junc...