SI6862DQ

www.DataSheet4U.com Si6862DQ New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Current Sense PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.026 @ VGS = 4.5 V 0.036 @ VGS = 2.5 V ID (A) 6.6 5.6 D KELVIN TSSOP-8 D S1 SENSE1 G 1 2 3 4 Top View G D 8 D S2 SENSE2 KELVIN 7 6 5 S1 SENSE1 S2 SENSE2 Si6862DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 6.6 5.2 30 1.5 1.8 1.1 Steady State Unit V 5.2 4.2 A 0.9 1.1 0.7 –55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71145 S-00717—Rev. B, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 93 36 Maximum 70 110 45 Unit _C/W 2-1 Si6862DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 m...