HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2001.05.01 Page...
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2001.05.01 Page No. : 1/2
HAD825SP
NPN EPITAXIAL PLANAR
TRANSISTOR
Features
Darlington
Transistor
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature .......................................................................................... -55 ~ +150 °C Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 80 V VCES Collector to Emitter Voltage ..................................................................................... 55 V VEBO Emitter to Base Voltage ..........................