HAD826SP

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No. : 1/3 HAD826SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications. Features Low Collector Saturation Voltage High Speed Switching Absolute Maximum Ratings Maximum Temperatures Storage Temperature....................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................. 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ........................................................................................... 500 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage............................................................................