IXBH40N140

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ratings 40N140 40N160 1400 1400 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C Features International standard package JEDEC TO-247 AD High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) Monolithic construction - high blocking voltage capability - very fast turn-off characteristics MOS Gate turn-on - drive simplicity Intrinsic diode Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies CRT deflection Lamp ballasts Advantages VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8VCES Clamped inductive load, L = 100 mH TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/10 Nm/lb.in. 6 g Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40N140 40N160 1400 1600 4 TJ = 25°C TJ = 125°C 8 40...