HAF1002

HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation (–4 to –6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 4 G Gate resistor Tempe– rature Sencing Circuit 1 1 2 3 Latch Circuit Gate Shut– down Circuit 2 3 S 1. Gate 2. Drain 3. Source 4. Drain HAF1002(L), HAF1002(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS+ VGSS– ID I D(pulse) Note1 Ratings –60 –16 3 –15 –30 –15 Unit V V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 50 150 –55 to +150 Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I I...