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Part Number IXTQ23N60Q
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFETs Q-Class
Datasheet IXTQ23N60Q DatasheetIXTQ23N60Q Datasheet (PDF)

  IXTQ23N60Q   IXTQ23N60Q
www.DataSheet4U.com Power MOSFETs Q-Class IXTQ 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 23 92 23 30 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g TO-3P (IXTQ) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VD.



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