MA26V11

www.DataSheet4U.com Variable Capacitance Diodes MA26V11 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD High frequency type by this low capacitance 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 8 125 −55 to +125 Unit V °C °C 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2L ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD1V CD4V Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz Min Typ Max 10 Unit nA pF  Ω 2.77 1.23 2.16 3.01 1.34 2.34 0.35 CD1V / CD4V rD Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: January 2004 SKD00079BED 1 MA26V11 IF  V F 1.2 10 f = 1 MHz Ta = 25°C CD  VR 1.045 1.035 1.025 f = 1 MHz CD  Ta 1.0 Diode capacitance CD (pF) Forward current IF (mA) VR = 1 V 4V Ta = 85°C 25°C CD (Ta) CD (Ta = 25°C) 0.8 1.015 1.005 0.995 0.985 0.975 0.6 −25°C 1 0.4 0.2 0 10−1 0.965 0 2 4 ...