MA26V14

www.DataSheet4U.com Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type Unit: mm For VCO s Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD High frequency type by this low capacitance 1.00±0.05 1 0.60±0.05 3 2 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±0.05 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 3H s Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 4.99 2.33 2.05 Conditions Min Typ Max 10 5.41 2.53 2.23 0.40  Ω Unit nA pF Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15±0.05 0.05±0.03 0.35±0.01 Publication date: April 2002 SKD00082AED 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken ...