(PDF) IC62LV25616L Datasheet PDF | ICSI





IC62LV25616L Datasheet PDF

Part Number IC62LV25616L
Description 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Manufacture ICSI
Total Page 11 Pages
PDF Download Download IC62LV25616L Datasheet PDF

Features: Datasheet pdf www.DataSheet4U.com IC62LV25616L IC62LV 25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0 B History Initial Draft Draft Date Ma y 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns produc t August 21,2001 : 60 to 40 ns for 70 n s product 2. Change for VCC: 2.2-3.6V t o 2.7-3.6V 3.1 Change for ICC test cond itiomn: VCC=Max. to 3V 3.2 Change for I CC: 35 to 40mA for 55 ns commercial pro duct 30 to 35mA for 70 ns commercial po rduct 25 to 30 mA for 100 ns commercial product 4. Change for ISB1 test condit ions: with CE controlled only 5.1 Chang e for VDR Min. : 1.2 to 1.5V 5.2 Change for IDR test condition: VCC=1.2 to 1.5 V January 29,2002 1.Change for ICC: 40 mA to 25 mA for 55 ns 35 mA to 20 mA fo r 70 ns 30 mA to 15mA for 100 ns 2.Chan ge for IDR: 4µA to 5 µA for commercia l/LL product 6µA to 9 µA for Industri al/LL Product October 9,2002 Change for VOH: 2.0V to 2.4V 0C 0D The attached datasheets are provided by.

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IC62LV25616L datasheet
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IC62LV25616L
IC62LV25616LL
Document Title
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
0A
History
Initial Draft
Draft Date
May 1,2001
Remark
Preliminary
0B
1. Change for tPWE: 45 to 40 ns for 55 ns product
August 21,2001
: 60 to 40 ns for 70 ns product
2. Change for VCC: 2.2-3.6V to 2.7-3.6V
3.1 Change for ICC test conditiomn: VCC=Max. to 3V
3.2 Change for ICC: 35 to 40mA for 55 ns commercial product
30 to 35mA for 70 ns commercial porduct
25 to 30 mA for 100 ns commercial product
4. Change for ISB1 test conditions: with CE controlled only
5.1 Change for VDR Min. : 1.2 to 1.5V
5.2 Change for IDR test condition: VCC=1.2 to 1.5V
0C
1.Change for ICC: 40 mA to 25 mA for 55 ns
January 29,2002
35 mA to 20 mA for 70 ns
30 mA to 15mA for 100 ns
2.Change for IDR: 4µA to 5 µA for commercial/LL product
6µA to 9 µA for Industrial/LL Product
0D Change for VOH: 2.0V to 2.4V
October 9,2002
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR013-0D 10/11/2002
1

IC62LV25616L datasheet
IC62LV25616L
IC62LV25616LL
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access times: 55, 70, 100 ns
CMOS low power operation
-- 60 mW (typical) operating
-- 3 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.6V Vcc power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP-2 and 48-pin
6*8mm TF-BGA
DESCRIPTION
The ICSI IC62LV25616L and IC62LV25616LL are low-power,
4.194,304 bit static RAMs organized as 262,144 words by 16
bits. They are fabricated using ICSI's high-performance CMOS
technology. This highly reliable process coupled with innova-
tive circuit design techniques, yields high-performance and
low power consumption devices.
When CE is HIGH (deselected) or both LB and UB are HIGH,
the device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using Chip Enable
Output and Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IC62LV25616L and IC62LV25616LL are packaged in the
JEDEC standare 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE CONTROL
WE CIRCUIT
UB
LB
COLUMN I/O
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2001, Integrated Circuit Solution Inc.
2 Integrated Circuit Solution Inc.
LPSR013-0D 10/11/2002





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