IC62LV25616LL

www.DataSheet4U.com IC62LV25616L IC62LV25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 21,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 35 to 40mA for 55 ns commercial product 30 to 35mA for 70 ns commercial porduct 25 to 30 mA for 100 ns commercial product 4. Change for ISB1 test conditions: with CE controlled only 5.1 Change for VDR Min. : 1.2 to 1.5V 5.2 Change for IDR test condition: VCC=1.2 to 1.5V January 29,2002 1.Change for ICC: 40 mA to 25 mA for 55 ns 35 mA to 20 mA for 70 ns 30 mA to 15mA for 100 ns 2.Change for IDR: 4µA to 5 µA for commercial/LL product 6µA to 9 µA for Industrial/LL Product October 9,2002 Change for VOH: 2.0V to 2.4V 0C 0D The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. LPSR013-0D 10/11/2002 1 IC62LV25616L IC62LV25616LL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access times: 55, 70, 100 ns CMOS low power operation -- 60 mW (typical) operating -- 3 µW (typical) CMOS standby TTL comp...