RAM. IC62LV51216LL Datasheet

IC62LV51216LL Datasheet PDF


Part

IC62LV51216LL

Description

512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM

Manufacture

ICSI

Page 12 Pages
Datasheet
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IC62LV51216LL Datasheet
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IC62LV51216L
IC62LV51216LL
Document Title
512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
0A
0B
History
Draft Date
Initial Draft
January 3,2002
1. Add CE2 pin for 48 pin TF-BGA
September 2,2002
2. Change for ICC: 35 mA to 30 mA for 55 ns Industrial product
30 mA to 25 mA for 70 ns Industrial product
25 mA to 20 mA for 100 ns Industrial product
30 mA to 25 mA for 55 ns Commerical product
25 mA to 20 mA for 70 ns Commerical product
20 mA to 15 mA for 100 ns Commerical product
3. Change for ISB2: 20 µA to 15 µA for Commerical product
4. Change for IDR: 15 µA to 20 µA for Commerical/L product
6 µA to 13 µA for Commerical/LL product
20 µA to 30 µA for Industrial/L product
9 µA to 23 µA for Industrial/LL product
0C
1. Revise typo for pin assignment H1 from NC to A18
January 22,2003
2. Change Truth Table of LB/UB control,CE1 and CE2 to "Don't care"
3. Change DC parameters for TSOP-2 package as follows
(1)VIH : 2.2V to 2.8V
(2)ISB1 : 0.2mA to 0.7mA for commercial product
0.3mA to 0.8mA for Industrial product
(3)ISB2 : 15µA to 20µA for commercial/LL product
25µA to 30µA for Industrial/LL product
(4)ICC : 25mA to 30mA for commercial/LL product
30mA to 35mA for Industrial/LL product
Remark
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR014-0C 1/22/2003
1

IC62LV51216LL Datasheet
IC62LV51216L
IC62LV51216LL
512K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access times: 55, 70, 100 ns
CMOS low power operation
ICC=18mA (typical)* operating
ISB2=3µA (typical)* CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.6V Vcc power supply
• Fully static operation: no clock or refresh re-
quired
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the know good die from 44-pin
TSOP-2 and 48-pin 8x10mm TF-BGA
• CE2 pin only for 48-pin TF-BGA.
* Typical values are measured at VCC=3.0V, TA=25°C
DESCRIPTION
The ICSI IC62LV51216L and IC62LV51216LL are low-power,
8.388,608 bit static RAMs organized as 524,288 words by 16
bits. They are fabricated using ICSI's high-performance CMOS
technology. This highly reliable process coupled with innova-
tive circuit design techniques, yields high-performance and
low power consumption devices.
When CE1 is HIGH or when CE2 is low (deselected) or both LB
and UB are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced by using CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
Output and Enable inputs, CE1, CE2 and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower Byte
(LB) access.
The IC62LV51216L and IC62LV51216LL are packaged in the
JEDEC standare 44-pin TSOP-2 and 48-pin 8*10mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE1/ CE2
OE
WE
UB
LB
CONTROL
CIRCUIT
COLUMN I/O
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2 Integrated Circuit Solution Inc.
LPSR014-0C 1/22/2003


Features Datasheet pdf www.DataSheet4U.com IC62LV51216L IC62LV 51216LL Document Title 512 K x 16 bit L ow Voltage and Ultra Low Power CMOS Sta tic RAM Revision History Revision No 0 A 0B History Draft Date Remark Init ial Draft January 3,2002 1. Add CE2 pin for 48 pin TF-BGA September 2,2002 2. Change for ICC: 35 mA to 30 mA for 55 n s Industrial product 30 mA to 25 mA for 70 ns Industrial product 25 mA to 20 m A for 100 ns Industrial product 30 mA t o 25 mA for 55 ns Commerical product 25 mA to 20 mA for 70 ns Commerical produ ct 20 mA to 15 mA for 100 ns Commerical product 3. Change for ISB2: 20 µA to 15 µA for Commerical product 4. Change for IDR: 15 µA to 20 µA for Commeric al/L product 6 µA to 13 µA for Commer ical/LL product 20 µA to 30 µA for In dustrial/L product 9 µA to 23 µA for Industrial/LL product 1. Revise typo fo r pin assignment H1 from NC to A18 Janu ary 22,2003 2. Change Truth Table of LB /UB control,CE1 and CE2 to "Don't care" 3. Change DC parameters for TSOP-2 package as follows (1)VIH : 2.2V to 2.
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