IC62LV5128L

www.DataSheet4U.com IC62LV5128L IC62LV5128LL Document Title 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 31,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 30 to 25mA for 55 ns product 25 to 20mA for 70 ns porduct 20 to 15 mA for 100 ns product 4.1 Change for VDR Min. : 1.2 to 1.5V 4.2 Change for IDR test condition: VCC=1.2 to 1.5V and IDR 5. Change for tHZCE 25 to 20 ns for 55 ns product 6. Change for tHZWE 33 to 30 ns for 70 ns product The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. LPSR012-0B 08/31/2001 1 IC62LV5128L IC62LV5128LL 512K x 8 LOW POWER and LOW VCC CMOS STATIC RAM FEATURES Access times of 55, 70, 100 ns CMOS Low power operation: — 60 mW (typical) operation — 3 µW (typical) standby Low data retention voltage: 1.5V (min.) Output Enable (OE) and Chip Enable (CE) inputs for ease in applications TTL compatible inputs and outputs Fully static operation: — No clock or refresh reguired Single 2.7V-3.6V power supply Available in the 32-pin 8*20mm TSOP...