IRF7832ZPBF

www.DataSheet4U.com PD - 96013A IRF7832ZPbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free l 100% tested for Rg VDSS 30V 3.8m:@VGS = 10V A A D D D D RDS(on) max Qg 30nC S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 21 17 160 2.5 1.6 0.02 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 10 www.irf.com 1 06/30/05 IRF7832ZPbF Static @ T J = 25°C (unless otherwise specified) Parameter BV DSS ∆Β V DSS / ∆T J R DS(on) V GS(th) ∆V GS(th) I DSS I GSS gfs Qg Q gs1 Q gs2 Q gd Q godr Q sw Q oss Rg t d(on) tr t d(off) tf C iss C oss C rss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Sourc...