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PBYR235CT

NXP

Rectifier diodes Schottky barrier

www.DataSheet4U.com Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low for...


NXP

PBYR235CT

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www.DataSheet4U.com Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance low profile surface mounting package PBYR245CT series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 2 A VF ≤ 0.45V SOT223 DESCRIPTION a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR245CT series is supplied in the surface mounting SOT223 package. PINNING PIN 1 2 3 tab anode 1 cathode anode 2 cathode 4 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR2 Tsp ≤ 74 ˚C square wave; δ = 0.5; Tsp ≤ 119 ˚C square wave; δ = 0.5; Tsp ≤ 119 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 40 MIN. MAX. 40CT 40 40 40 2 2 6 6.6 1 150 150 45CT 45 45 45 UNIT V V V A A A A A ˚C ˚C...




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