High Speed Switching Diode
www.DataSheet4U.com
1SS400T1
Preferred Device
High−Speed Switching Diode
Features
• • • • •
High−Speed Switching App...
Description
www.DataSheet4U.com
1SS400T1
Preferred Device
High−Speed Switching Diode
Features
High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package This is a Pb−Free Device
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1 CATHODE
2 ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 100 200 500 Unit V mAdc mAdc 1 SOD−523 CASE 502 PLASTIC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/°C °C/W °C Max Unit
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad.
AMG G 1
ELECTRICAL CHARACTERISTICS
Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) IR − CD − VF − trr − 4.0 ns 1.2 Vdc 3.0 pF 0.1 mAdc Symbol Min Max Unit
A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary dependi...
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