1SS400T1

www.DataSheet4U.com 1SS400T1 Preferred Device High−Speed Switching Diode Features High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package This is a Pb−Free Device http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 100 200 500 Unit V mAdc mAdc 1 SOD−523 CASE 502 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/°C °C/W °C Max Unit MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. AMG G 1 ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) IR − CD − VF − trr − 4.0 ns 1.2 Vdc 3.0 pF 0.1 mAdc Symbol Min Max Unit A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary dependi...