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2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 −460 (Typical) • Low VCE(sat), < 0.5 V • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V • Available in 4 mm, 8000 Unit Tape & Reel • This is a Pb−Free Device
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PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
COLLECTOR 3
MAXIMUM RATINGS (TA = 25°C)
Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value −60 −50 −6.0 −100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 265 150 −55 ~ + 150 Unit mW °C °C
1 2 3
MARKING DIAGRAM
SOT−723 CASE 631AA F9 M
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint.
F9 = Specific Device Code M = Date Code
ORDERING INFORMATION
Device 2SA2029M3T5G Package SOT−723 (Pb−Free) Shipping† 8000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
November, 2004 − Rev. 1
Publication Order Number: 2SA2029M3/D
2SA2029M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) − hFE 120 fT − COB − 140 3.5 − − pF − 560 MHz − −0.5 − Min −60 −50 −6.0 − − Typ − − − − − Max − − − −0.5 −0.1 Unit Vdc Vdc Vdc nA mA Vdc
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2SA2029M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
1000 TA = 25°C IC, COLLECTOR CURRENT (mA) 120 90 60 30 0 DC CURRENT GAIN TA = 75°C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = − 25°C TA = 25°C VCE = 10 V
100
VCE, COLLECTOR VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 1. IC − VCE
VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1
Figure 2. DC Current Gain
1
0.5
TA = 25°C VCE = 5 V
5
10
20
40
60
80
100
150 200
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10
Figure 4. On Voltage
20 VCB (V)
30
40
Figure 5. Capacitance
Figure 6. Capacitance
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2SA2029M3T5G
PACKAGE DIMENSIONS
SOT−723 CASE 631AA−01 ISSUE B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
−X− D b1 −Y−
3
A E
1 2
L C
HE
DIM A b b1 C D E e HE L
e
b 2X 0.08 (0.0032) X Y
MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25
INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157
0.40 0.0157
0.40 0.0157
SCALE 20:1 mm Ǔ ǒinches
SOT−723
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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