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2SC5658M3T5G NPN Silicon General Purpose Amplifier Transistor
This NPN transistor is designed for g...
www.DataSheet4U.com
2SC5658M3T5G
NPN Silicon General Purpose Amplifier
Transistor
This
NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. Reduces Board Space High hFE, 210 −460 (typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 8 mm, 7-inch/3000 Unit Tape and Reel This is a Pb−Free Device
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NPN GENERAL PURPOSE AMPLIFIER
TRANSISTORS SURFACE MOUNT
COLLECTOR 3
MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 260 150 −55 ~ + 150 Unit mW °C °C
1 2 3
MARKING DIAGRAM
SOT−723 CASE 631AA XX M
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
XX = Specific Device Code M = Date Code
ORDERING INFORMATION
Device 2SC5658M3T5G Package SOT−723 Shipping† 3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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