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2SC5658M3T5G Dataheets PDF



Part Number 2SC5658M3T5G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN Silicon General Purpose Amplifier Transistor
Datasheet 2SC5658M3T5G Datasheet2SC5658M3T5G Datasheet (PDF)

www.DataSheet4U.com 2SC5658M3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 −460 (typical) • Low VCE(sat), < 0.5 V • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V • Available in 8 mm, 7-inch/3000 Unit Tape and Reel • .

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www.DataSheet4U.com 2SC5658M3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 −460 (typical) • Low VCE(sat), < 0.5 V • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V • Available in 8 mm, 7-inch/3000 Unit Tape and Reel • This is a Pb−Free Device http://onsemi.com NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 260 150 −55 ~ + 150 Unit mW °C °C 1 2 3 MARKING DIAGRAM SOT−723 CASE 631AA XX M 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. XX = Specific Device Code M = Date Code ORDERING INFORMATION Device 2SC5658M3T5G Package SOT−723 Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2004 1 February, 2004 − Rev. 0 Publication Order Number: 2SC5658M3/D 2SC5658M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 2) (IC = 60 mAdc, IB = 5.0 mAdc) DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) − hFE 120 fT COB − − − 180 2.0 560 − − MHz pF − 0.4 − Min 50 50 5.0 − − Typ − − − − − Max − − − 0.5 0.5 Unit Vdc Vdc Vdc mA mA Vdc http://onsemi.com 2 2SC5658M3T5G TYPICAL ELECTRICAL CHARACTERISTICS 60 IC, COLLECTOR CURRENT (mA) 50 40 30 20 10 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) TA = 25°C 160 mA 140 mA DC CURRENT GAIN 120 mA 100 mA 80 mA 60 mA 40 mA IB = 20 mA 8 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) TA = 75°C TA = − 25°C 100 1000 TA = 25°C VCE = 10 V Figure 1. IC − VCE 2 TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (V) 1 0.5 TA = 25°C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region 20 Cib, INPUT CAPACITANCE (pF) 18 16 14 12 10 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 0 1 2 VEB (V) 3 4 1 0 Figure 4. On Voltage 10 20 VCB (V) 30 40 Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 2SC5658M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE A −X− D b1 −Y− 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 A E 1 2 L C HE e b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches SOT−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications .


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