BAV56TT1

www.DataSheet4U.com BAW56TT1 Preferred Device Dual Switching Diode Features Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 3 ANODE CATHODE 1 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1), TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2), TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 360 2.9 RθJA TJ, Tstg 345 −55 to +150 mW mW/°C °C/W °C 555 mW mW/°C °C/W 1 CASE 463 SC−75/SOT−416 STYLE 4 Max Unit MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad A1 M G G 1 A1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device BAW56TT1 Package Shipping † SC−75/SOT−416 3000/Tape & Reel BAW56TT1G SC−75/SOT−416 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifi...