Mount Transistors. EMD4DXV6T1 Datasheet


EMD4DXV6T1 Transistors. Datasheet pdf. Equivalent


EMD4DXV6T1


(EMD4DXV6T1 / EMD4DXV6T5) Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors
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EMD4DXV6T1, EMD4DXV6T5
Preferred Devices

Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
(3)

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(2) R1 Q1 Q2 R2 (4) R1 (5) (6) R2 (1)

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.
Features

6 1

• • • •

Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices

SOT−563 CASE 463A STYLE 1

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 1 U7 M G G

MARKING DIAGRAM

THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device D...



EMD4DXV6T1
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EMD4DXV6T1,
EMD4DXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD4DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO 50 Vdc
Collector-Emitter Voltage
VCEO 50 Vdc
Collector Current
IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD 357 mW
2.9 mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
350 °C/W
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C
PD 500 mW
4.0 mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
250 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 board with minimum mounting pad.
© Semiconductor Components Industries, LLC, 2005
October, 2005− Rev. 1
1
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(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
U7 M G
G
1
U7 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
EMD4DXV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
EMD4DXV6T5G SOT−563 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
EMD4DXV6/D

EMD4DXV6T1
EMD4DXV6T1, EMD4DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA)
ON CHARACTERISTICS
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
V(BR)CBO
V(BR)CEO
hFE
VCE(SAT)
VOL
VOH
R1
Resistor Ratio
R1/R2
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA)
ON CHARACTERISTICS
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
V(BR)CBO
V(BR)CEO
hFE
VCE(SAT)
VOL
VOH
R1
Resistor Ratio
R1/R2
250
200
Min Typ Max
Unit
− − 100 nAdc
− − 500 nAdc
− − 0.2 mAdc
50 −
50 −
80 140
− − 0.25
− − 0.2
4.9 −
7.0 10 13
0.17 0.21 0.25
Vdc
Vdc
Vdc
Vdc
Vdc
kW
− − 100 nAdc
− − 500 nAdc
− − 0.1 mAdc
50 −
50 −
80 140
− − 0.25
− − 0.2
4.9 −
32.9 47 61.1
0.8 1.0 1.2
Vdc
Vdc
Vdc
Vdc
Vdc
kW
150
100
50
0−50
RqJA = 833°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
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