www.DataSheet4U.com
EMD4DXV6T1, EMD4DXV6T5
Preferred Devices
Dual Bias Resistor Transistors
NPN and PNP Silicon Surfac...
www.DataSheet4U.com
EMD4DXV6T1, EMD4DXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
(3)
http://onsemi.com
(2) R1 Q1 Q2 R2 (4) R1 (5) (6) R2 (1)
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.
Features
6 1
Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices
SOT−563 CASE 463A STYLE 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (
PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 1 U7 M G G
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 1) Jun...