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EMD5DXV6T1 Dataheets PDF



Part Number EMD5DXV6T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Bias Resistor Transistors
Datasheet EMD5DXV6T1 DatasheetEMD5DXV6T1 Datasheet (PDF)

www.DataSheet4U.com EMD5DXV6T1, EMD5DXV6T5 Preferred Devices Product Preview Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these.

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www.DataSheet4U.com EMD5DXV6T1, EMD5DXV6T5 Preferred Devices Product Preview Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD5DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. http://onsemi.com (3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1) 6 54 23 • • • • • 1 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating SOT−563 CASE 463A PLASTIC MARKING DIAGRAM U5 D U5 = Specific Device Code D = Date Code ORDERING INFORMATION Device EMD5DXV6T1 EMD5DXV6T5 Package SOT−563 SOT−563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 July, 2003 − Rev. P1 Publication Order Number: EMD5DXV6/D EMD5DXV6T1, EMD5DXV6T5 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction and Storage Temperature 1. FR−4 @ Minimum Pad Junction-to-Ambient RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W Symbol PD Unit mW mW/°C °C/W °C http://onsemi.com 2 EMD5DXV6T1, EMD5DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) ICBO ICEO IEBO − − − − − − 100 500 1.0 nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, V.


UMD5N EMD5DXV6T1 EMF5


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