Document
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EMD5DXV6T1, EMD5DXV6T5
Preferred Devices
Product Preview Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD5DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.
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(3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1)
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Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating
SOT−563 CASE 463A PLASTIC
MARKING DIAGRAM
U5 D
U5 = Specific Device Code D = Date Code
ORDERING INFORMATION
Device EMD5DXV6T1 EMD5DXV6T5 Package SOT−563 SOT−563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
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July, 2003 − Rev. P1
Publication Order Number: EMD5DXV6/D
EMD5DXV6T1, EMD5DXV6T5
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction and Storage Temperature 1. FR−4 @ Minimum Pad Junction-to-Ambient RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W
Symbol PD
Unit mW mW/°C °C/W °C
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EMD5DXV6T1, EMD5DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) ICBO ICEO IEBO − − − − − − 100 500 1.0 nAdc nAdc mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, V.