Silicon Pin Diode
www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
MMVL3401T1
This device is designed primarily for VHF ...
Description
www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
MMVL3401T1
This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Capacitance – 0.7 pF Typ at VR = 20 Vdc Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ) @ IF = 10 mAdc Device Marking: 4D
1
SILICON PIN SWITCHING DIODE
2
PLASTIC, CASE 477 SOD– 323
ORDERING INFORMATION
Device MMVL3401T1 Package SOD–323 Shipping 3000 / Tape & Reel
1 CATHODE
2 ANODE
MAXIMUM RATINGS
Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C
THERMAL CHARACTERISTICS
RθJA TJ, Tstg *FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Diode Capacitance (VR = 20 Vdc) Series Resistance (IF = 10 mAdc, f =100MHz) Reverse Leakage Current (VR = 25 Vdc) Symbol V(BR)R CT RS IR Min 35 — — — Typ — — – — Max — 1.0 0.7 0.1 Unit Vdc pF Ω µAdc
MMVL3401T1–1/2
LESHAN RADIO COMPANY, LTD.
MMVL3401T1
TYPICAL CHARACTERISTICS
I F , FORWARD CURRENT (mA)
RS, SERIES RESISTANCE (Ω)
I F, FORWARD CURRENT (mA)
VF, ...
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