MMVL409T1

www.DataSheet4U.com MMVL409T1 Preferred Device Silicon Tuning Diode These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Device Marking: X5 http://onsemi.com VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 20 200 Unit Vdc mAdc 1 2 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit mW mW/°C °C/W °C PLASTIC SOD–323 CASE 477 RqJA TJ, Tstg *FR–4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMVL409T1 Package SOD–323 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 January, 2000 – Rev. 1 Publication Order Number: MMVL409T1/D MMVL409T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C Ct, Diode Capacitance VR = 3.0 Vdc, f = ...