MSD42WT1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD42WT1/D Preliminary Information NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Available in 8 mm, 7-inch/3000 Unit Tape and Reel MSD42WT1 Motorola Preferred Devices NPN GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc mAdc 1 2 CASE 419–02, STYLE 3 SC–70/SOT–323 DEVICE MARKING MSD42WT1 = H1D COLLECTOR 3 THERMAL CHARACTERISTICS Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter–Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage(2) (IC = 200 mAdc, IB = 2.0 mAdc) Symbol V(BR)CEO V(BR)CBO V...