DIM200MBS12-A000 Module Datasheet

DIM200MBS12-A000 Datasheet, PDF, Equivalent


Part Number

DIM200MBS12-A000

Description

Bi-directional Switch Igbt Module

Manufacture

Dynex Semiconductor

Total Page 10 Pages
Datasheet
Download DIM200MBS12-A000 Datasheet


DIM200MBS12-A000
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DIM200MBS12-A000
Replaces issue May 2002, version DS5543-1.3
FEATURES
s 10µs Short Circuit Withstand
s Non Punch Through Silicon
s Isolated Copper Baseplate
DIM200MBS12-A000
IGBT Bi-Directional Switch Module
Preliminary Information
DS5545-2.1 June 2002
KEY PARAMETERS
VDRM
VT
IC
IC(PK)
(typ)
(max)
(max)
±1200V
4.3V
200A
400A
APPLICATIONS
s Matrix Converters
s Brushless Motor Controllers
s Frequency Converters
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MBS12-A000 is a bi-directional 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7(E2)
6(G2)
11(C2)
1(C2)
2(E1E2)
3(C1)
9(C1)
4(G1)
5(E1)
Fig. 1 Bi-directional switch circuit diagram
ORDERING INFORMATION
Order As:
DIM200MBS12-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

DIM200MBS12-A000
www.DataSheet4U.com
DIM200MBS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VDRM
Collector-emitter voltage
VGE = 0V
(measured across terminals 2 and 3)
VGES
I
C
IC(PK)
Pmax
I2t
V
isol
QPD
Gate-emitter voltage
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation
T = 25˚C, T = 150˚C
case
j
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
200 A
400 A
1435 W
6.25 kA2s
2500 V
10 PC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Features www.DataSheet4U.com DIM200MBS12-A000 D IM200MBS12-A000 IGBT Bi-Directional Swi tch Module Preliminary Information Repl aces issue May 2002, version DS5543-1.3 DS5545-2.1 June 2002 FEATURES s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Basepl ate KEY PARAMETERS VDRM (typ) VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400 A APPLICATIONS s s s Matrix Converter s Brushless Motor Controllers Frequency Converters 7(E2) 6(G2) 11(C2) 1(C2) 3( C1) 9(C1) 4(G1) 5(E1) 2(E1E2) The Powe rline range of high power modules inclu des half bridge, chopper, dual, single and bi-directional switch configuration s covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MBS 12-A000 is a bi-directional 1200V, n ch annel enhancement mode, insulated gate bipolar transistor (IGBT) module. The I GBT has a wide reverse bias safe operat ing area (RBSOA) plus full 10µs short circuit withstand. The module incorpora tes an electrically isolated base plate and low inductance constru.
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