Half Bridge. DIM200MHS12-A000 Datasheet

DIM200MHS12-A000 Bridge. Datasheet pdf. Equivalent


Dynex Semiconductor DIM200MHS12-A000
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DIM200MHS12-A000
DIM200MHS12-A000
Half Bridge IGBT Module
Replaces June 2002, version DS5535-2.1
DS5535-3.0 March 2003
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I Inverters
I Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MHS12-A000 is a half bridge switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200MHS12-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200MHS12-A000 Datasheet
Recommendation DIM200MHS12-A000 Datasheet
Part DIM200MHS12-A000
Description Igbt Modules - Half Bridge
Feature DIM200MHS12-A000; www.DataSheet4U.com DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, .
Manufacture Dynex Semiconductor
Datasheet
Download DIM200MHS12-A000 Datasheet




Dynex Semiconductor DIM200MHS12-A000
www.DataSheet4U.com
DIM200MHS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
I2t
Visol
Q
PD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Diode I2t value
V = 0, t = 10ms, T = 125˚C
Rp
vj
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
200 A
400 A
1435 W
6.25 kA2s
2500 V
10 PC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com



Dynex Semiconductor DIM200MHS12-A000
www.DataSheet4U.com
DIM200MHS12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Al2O3
Cu
Creepage distance:
22mm
Clearance:
12mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per arm)
Rth(j-c)
Thermal resistance - diode (per arm)
Rth(c-h)
Tj
Thermal resistance - case to heatsink
(per module)
Junction temperature
T Storage temperature range
stg
- Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Min. Typ. Max. Units
- - 87 ˚C/kW
- - 194 ˚C/kW
- - 15 ˚C/kW
- - 150 ˚C
- - 125 ˚C
–40 - 125 ˚C
- - 5 Nm
- - 2 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/10







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