DIM200MHS12-A000 Bridge Datasheet

DIM200MHS12-A000 Datasheet, PDF, Equivalent


Part Number

DIM200MHS12-A000

Description

Igbt Modules - Half Bridge

Manufacture

Dynex Semiconductor

Total Page 10 Pages
Datasheet
Download DIM200MHS12-A000 Datasheet


DIM200MHS12-A000
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DIM200MHS12-A000
DIM200MHS12-A000
Half Bridge IGBT Module
Replaces June 2002, version DS5535-2.1
DS5535-3.0 March 2003
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I Inverters
I Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MHS12-A000 is a half bridge switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200MHS12-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

DIM200MHS12-A000
www.DataSheet4U.com
DIM200MHS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
I2t
Visol
Q
PD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Diode I2t value
V = 0, t = 10ms, T = 125˚C
Rp
vj
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
200 A
400 A
1435 W
6.25 kA2s
2500 V
10 PC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Features www.DataSheet4U.com DIM200MHS12-A000 D IM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.1 DS5535-3.0 March 2003 FEATURES I I I 10µs Short Circuit Withstand Non Punc h Through Silicon Isolated Copper Basep late KEY PARAMETERS VCES (typ) VCE(sat )* (max) IC (max) IC(PK) 1200V 2.2V 20 0A 400A *(measured at the power busbar s and not the auxiliary terminals) APP LICATIONS I I Inverters Motor Controll ers 11(C2) 2(E2) 6(G2) 7(E2) 3(C1) 1(E 1C2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MHS12-A000 is a half bridge switch 1200V, n channel enhancement mod e, insulated gate bipolar transistor (I GBT) module. The IGBT has a wide revers e bias safe operating area (RBSOA) plus full 10µs short circuit withstand. Th e module incorporates an electrically i solated base plate and low inductance construction enabling circu.
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