DIM200MHS12-A000

www.DataSheet4U.com DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.1 DS5535-3.0 March 2003 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters Motor Controllers 11(C2) 2(E2) 6(G2) 7(E2) 3(C1) 1(E1C2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 9(C1) 5(E1) 4(G1) Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order As: DIM200MHS12-A000 Note: When ordering, please use the whole part number. 11 10 8 9 1 2 3 6 7 5 4 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 w...