DIM200MLS12-A000 Chopper Datasheet

DIM200MLS12-A000 Datasheet, PDF, Equivalent


Part Number

DIM200MLS12-A000

Description

Igbt Modules - Chopper

Manufacture

Dynex Semiconductor

Total Page 10 Pages
Datasheet
Download DIM200MLS12-A000 Datasheet


DIM200MLS12-A000
www.DataSheet4U.com
Replaces November 2002, version DS5553-1.1
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
DIM200MLS12-A000
DIM200MLS12-A000
IGBT Chopper Module
DS5553-2 March 2003
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
11(C2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MLS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The module incorporates a high current rated
freewheel diode. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MLS12-A000
Note: When ordering, please use the whole part number.
Fig. 1 Chopper circuit diagram - lower arm controlled
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

DIM200MLS12-A000
www.DataSheet4U.com
DIM200MLS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
I2t
Visol
Q
PD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Diode I2t value
V = 0, t = 10ms, T = 125˚C
Rp
vj
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
200 A
400 A
1435 W
6.25 kA2s
2500 V
10 PC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Features www.DataSheet4U.com DIM200MLS12-A000 D IM200MLS12-A000 IGBT Chopper Module Rep laces November 2002, version DS5553-1.1 DS5553-2 March 2003 FEATURES I I I 1 0µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Basepla te KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLI CATIONS I I I I I Choppers Motor Contr ollers Induction Heating Resonant Conve rters Power Supplies 7(E2) 6(G2) 11(C2) 1(A,C2) 2(E2) 3(K) The Powerline rang e of high power modules includes half b ridge, chopper, dual, single and bi-dir ectional switch configurations covering voltages from 600V to 3300V and curren ts up to 2400A. The DIM200MLS12-A000 is a 1200V, n channel enhancement mode, i nsulated gate bipolar transistor (IGBT) chopper module configured with the low er arm of the bridge controlled. The mo dule incorporates a high current rated freewheel diode. The IGBT has a wide reverse bias safe operating.
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