DIM200PHM33-A000 Module Datasheet

DIM200PHM33-A000 Datasheet, PDF, Equivalent


Part Number

DIM200PHM33-A000

Description

Half Bridge Igbt Module

Manufacture

Dynex Semiconductor

Total Page 10 Pages
Datasheet
Download DIM200PHM33-A000 Datasheet


DIM200PHM33-A000
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DIM200PHM33-A000
Replaces November 2002, version DS5464-6.2
FEATURES
I 10µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
DIM200PHM33-A000
Half Bridge IGBT Module
DS5464-7.1 January 2003
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
3.4V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-A000
Note: When ordering, please use the whole part number.
1(E1/C2)
2(C1)
5(E1)
4(G1)
8(C1)
3(E2)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

DIM200PHM33-A000
www.DataSheet4U.com
DIM200PHM33-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
V
GES
IC
IC(PK)
Pmax
I2t
V
isol
QPD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 85˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation T = 25˚C, T = 150˚C
case
j
Diode I2t value (Diode arm)
VR = 0, tp = 10ms, Tvj = 125˚C
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
Max. Units
3300 V
±20 V
200 A
400 A
2608 W
20 kA2s
6000 V
10 pC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Features www.DataSheet4U.com DIM200PHM33-A000 D IM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464 -6.2 DS5464-7.1 January 2003 FEATURES I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 200A 400A 10µs Short Circuit Withsta nd High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates *(measured at the power busbars and not the auxiliary te rminals) APPLICATIONS I I I 1(E1/C2) 2(C1) 5(E1) 4(G1) 3(E2) 7(E2) 6(G2) Hi gh Reliability Inverters Motor Controll ers Traction Auxiliaries The Powerline range of high power modules includes h alf bridge, chopper, dual, single and b i-directional switch configurations cov ering voltages from 600V to 3300V and c urrents up to 2400A. The DIM200PHM33-A0 00 is a half bridge 3300V, n channel en hancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is .
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