DGS20-018AS

www.DataSheet4U.com DGS 20-018AS Gallium Arsenide Schottky Rectifier Preliminary Data IFAV = 23 A VRRM = 180 V CJunction = 33 pF VRSM V 180 VRRM V 180 Type A C TO-263 AB A DGS 20-018AS A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFAV IFAV IFSM TVJ Tstg Ptot Conditions TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine Maximum Ratings 23 17 30 -55...+175 -55...+150 A A A °C °C W TC = 25°C 48 Features Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 q q q q q q q Applications MHz Switched mode power supplies q (SMPs) q q q Small size SMPs High frequency converters Resonant converters Symbol IR VF CJ RthJC Weight Conditions TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 7.5 A; IF = 7.5 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 2.0 2.0 0.8 0.8 33 3.1 2 1.0 mA mA V V pF K/W g VR = 100 V; TVJ = 125°C Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 119 IXYS reserves the right to change limits, Conditions and dimensions. © 2001 IXYS All rights reserved 1-2 DGS 20-018AS 30 10 A IF 400 pF CJ 100 1 TVJ = 125°C 25°C 0.1 TVJ = 125°C 0.01 0.0 0.5 1.0 1.5 VF V 2.0 10 0.1 1 10 100 V 1000 VR Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity...