PBSS4240DPN

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High efficiency leading to reduced heat generation Reduced printed-circuit board area requirements. APPLICATIONS Power management: – Complementary MOSFET driver – Dual supply line switching. Peripheral driver: – Half and full bridge motor drivers – Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS4240DPN MARKING CODE M3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector VCEO IC ICRP ICM RCEsat emitter-collector voltage QUICK REFERENCE DATA PBSS4240DPN MAX. SYMBOL PARAMETER NPN PNP 40 1.35 2 3 200 −40 −1.1 −2 −3 260 V A A A mΩ UNIT collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 handbook, halfpage 5 4 6 5 4 TR2 TR1 1 Top view 2 3 MAM445 1 2 3 Fig.1 Simplified outline SOT457 (SC-74) and symbol. 2003 Feb 20 2 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL...