NTJS4151P

www.DataSheet4U.com NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 Gate Diodes for ESD Protection Pb−Free Package is Available V(BR)DSS −20 V http://onsemi.com RDS(on) TYP 47 mW @ −4.5 V 70 mW @ −2.5 V 180 mW @ −1.8 V −4.2 A ID Max Applications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 25 °C tp = 10 ms PD IDM TJ, TSTG IS TL ESD Symbol VDSS VGS ID Value −20 ±12 −3.3 −2.4 −4.2 1.0 −10 −55 to 150 −1.3 260 4000 W D A Unit V V A 6 MARKING DIAGRAM TY D 1 SC−88 (SOT 363) CASE 419B TY D = Device Code = Date Code SC−88 (SOT−363) 1 6 D Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) ESD Human Body Model (HBM) °C D A °C V G 3 Top View 4 S 2 5 D THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction−to−Ambient – Steady State Junction−to−Ambient − t ≤ 5 s Junction−to−Lead – Steady State Symbol RqJA RqJA RqJL Max 125 75 45 NTJS4151PT1G Unit °C/W ORDERING INFORMATION Device NTJS4151PT1 Package SC−88 SC−88 (Pb−F...