BF1206F

SOT666 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Two low noise gain controlled amplifiers in a single package  Superior cross-modulation performance during AGC  High forward transfer admittance  High forward transfer admittance to input capacitance ratio  Suited for 3 volt applications 1.3 Applications  Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners NXP Semiconductors BF1206F Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions VDS drain-source voltage (DC) ID drain current (DC) yfs forward transfer admittance ID = 4 mA...