PH8030L

www.DataSheet4U.com PH8030L N-channel TrenchMOS logic level FET Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using1 TrenchMOS technology. 1.2 Features s Optimized for use in DC-to-DC converters s Logic level compatible s Very low switching and conduction losses s Lead-free package 1.3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook computers 1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 5.9 mΩ s ID ≤ 76.7 A s QGD = 3.1 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source (S) gate (G) mounting base; connected to drain (D) mb D Simplified outline Symbol G mbb076 S 1 2 3 4 SOT669 (LFPAK) w w w . D a t a S h e e t 4 U . c o m Philips Semiconductors PH8030L N-channel TrenchMOS logic level FET 3. Ordering information Table 2: Ordering information Package Name PH8030L LFPAK Description plastic single-ended surface mounted package (LFPAK); 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C Tmb = 25 °C...