PBSS4220V

www.DataSheet4U.com PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base tp ≤ 300 µs IC = 1 A; IB = 100 mA [1] Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 140 Max 20 2 4 175 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. www.DataSheet4U.com Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter 4 6 5 4 3 1, 2, 5, 6 Simplified outline Symbol collector collector 1 2 3 sym014 3. Ordering information Table 3: Ordering information Package Name PBSS4220V Description plastic surface m...