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H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3
OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT
APPROVALS
l
2.54 6.4 6.2 1.54 8.8 8.4 1 2 3
Dimensions in mm
UL recognised, File No. E91231
-
'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18 DESCRIPTION The H11B_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package.
6 5 4
4.3 4.1 0.5 0.3
7.8 7.4
0.5
3.3
9.6 8.4
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 30V 50V 5V 150mW 80mA 5V 105mW
FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances
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OPTION SM SURFACE MOUNT
OPTION G
5.08 max. 1.2 0.6 1.4 0.9 0.26 10.16
Total Power Dissipation 250mW (derate linearly 3.3mW/°C above 25°C)
10.2 9.5
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92167-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) HFE Collector-emitter Dark Current (ICEO) MIN TYP MAX UNITS 1.2 3 10 30 30 5 16K 100 nA 1.5 V V µA V V V TEST CONDITION IF = 10mA IR = 10µA VR = 3V IC = 1mA (note 2) IC = 100µA IE = 100µA VCE = 5V, IC = 5mA VCE = 10V
Output
Coupled
Current Transfer Ratio ( CTR )(Note 2) H11B1 500 H11B2 200 H11B3 100 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Turn on Time Output Turn off Time ton toff 5300 7500 5x1010 125 100 1.0
% % % V VRMS VPK Ω
µs µs
1mA IF , 5V VCE 1mA IF , 5V VCE 1mA IF , 5V VCE 1mA IF , 1mA IC (note 1) (note 1) VIO = 500V (note 1) VCC= 10V, IC = 10mA, RL = 100Ω , fig.1
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
FIGURE 1 VCC = 10V Input 100Ω IC = 10mA tr Input Output Output 10% 90% 10% 90% ton toff tf
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DB92167-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) Current transfer ratio CTR (%) 10000 5000 1000 800 500 100 50 10
Current Transfer Ratio vs. Forward Current
150
100
50
VCE = 5V TA = 25°C
0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 100
0 0.1 0.2 0.5 1 2 5 10 20 50 100 Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 100 50mA 20 Collector current I C (mA) 80 60 40 2mA 20 0 -30 0 25 50 75 100 125 0 1 2 3 4 5 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter voltage VCE ( V ) Normalised Current Transfer Ratio vs. Ambient Temperature 1.5 IF = 1mA 10mA 5mA TA = 25°C
80 Forward current I F (mA)
CE(SAT)
60
40 20 0
(V) 1.2 1.0 0.8 0.6 0.4 0.2 0 -30
Collector-emitter saturation voltage V
IF = 1mA IC = 1mA
Normalised current transfer ratio
IF = 1mA VCE = 5V
1.0
0.5
0 0 25 50 75 100 -30 Ambient temperature TA ( °C ) 0 25 50 75 Ambient temperature TA ( °C ) 100
7/12/00
DB92167-AAS/A2
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