Self-Protected FET
NIF5003N
Preferred Device
Self-Protected FET with Temperature and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HD...
Description
NIF5003N
Preferred Device
Self-Protected FET with Temperature and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.
Features
Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb−Free Packages are Available
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VDSS (Clamped)
42 V
RDS(on) TYP 53 mW @ 10 V
ID MAX (Limited)
14 A
Drain
Gate Input
Overvoltage Protection RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Continuous
Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2)
Thermal Resistance Junction−to−Case Junction−to...
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