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NIF5003N

ON Semiconductor

Self-Protected FET

NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HD...


ON Semiconductor

NIF5003N

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Description
NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb−Free Packages are Available http://onsemi.com VDSS (Clamped) 42 V RDS(on) TYP 53 mW @ 10 V ID MAX (Limited) 14 A Drain Gate Input Overvoltage Protection RG MPWR ESD Protection Temperature Current Current Limit Limit Sense Source MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage Drain Current Continuous Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Case Junction−to...




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