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NLAS3699B

ON Semiconductor

Dual DPDT Switch

NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This devi...


ON Semiconductor

NLAS3699B

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Description
NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−before−make feature. Features Single Supply Operation 1.65 to 4.5 V VCC Function Directly from LiON Battery Maximum Breakdown Voltage: 5.5 V Tiny 3 x 3 mm QFN Pb−Free Package Meet JEDEC MO−220 Specifications Low Static Power This is a Pb−Free Device* Typical Applications Cell Phone Speaker/Microphone Switching Ringtone−Chip/Amplifier Switching Four Unbalanced (Single−Ended) Switches Stereo Balanced (Push−Pull) Switching Important Information ESD Protection: HBM (Human Body Model) > 8000 V MM (Machine Model) > 400 V Continuous Current Rating Through each Switch ±300 mA Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 Pin for Pin Compatible with STG3699 http://onsemi.com MARKING DIAGRAMS ÇÇÇÇ QFN−16 CASE 485AE 16 1 NLAB 1 3699 ALYWG G A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) D1 1S1 Vcc 4S2 16 15 14 13 1S2 1 12 D4 1−2IN 2 2S1 3 11 4S1 10 3−4IN D2 4 9 3S2 5 6 7 8 2S2 GND 3S1 D3 ORDERING INFORMATION See detailed ordering and shipping information in the package ...




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