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NSR1020MW2T1G

ON Semiconductor

Schottky Barrier Diodes

www.DataSheet4U.com NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers ext...


ON Semiconductor

NSR1020MW2T1G

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Description
www.DataSheet4U.com NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. As part of a buck conversion circuit, a boost conversion circuit or a charging circuit the low Vf drop of the schottky improves the efficiency of the overall device by consuming less power in the forward mode. Features http://onsemi.com HIGH CURRENT SCHOTTKY BARRIER DIODE Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc High Current Capability ESD Rating − Human Body Model: CLASS 3B − Machine Model: C 1 CATHODE 2 ANODE Pb−Free Packages are Available 2 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Peak Revese Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Continuous Forward Current t = 8.3 ms Half Sinewave Junction Temperature Storage Temperature Range Symbol VR VRM PF 200 2.0 IF 1 IF 5 TJ Tstg 125 Max −55 to +150 °C °C A mW mW/°C A Value 20 30 Unit Vdc V 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM RE MG G M RE = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † Stresses exceeding Maximum Ratings...




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