NSS12200WT1G

www.DataSheet4U.com NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 12 VOLTS 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size This is a Pb−Free Device Benefits High Specific Current and Power Capability Reduces Required PCB Area Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage...