NTD4813NH

www.DataSheet4U.com NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.5 V D ID MAX 40 A Applications CPU Power Delivery DC−DC Converters High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 Unit V V A G S N−CHANNEL MOSFET 4 4 1.94 7.6 5.9 1.27 40 31 35.3 90 35 −55 to +175 29 6 44.4 W A 1 2 3 W A 4 1 2 3 1 DPAK CASE 369C (Bent Lead) STYLE 2 3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) 2 W A A °C A V/ns mJ 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4813NH G = Year = Work Week = Device Code = Pb−Free Package 4 Drain YWW 48 13NHG MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 13NHG 4 Drain YWW 48 13NHG C...