NTGD3133P

www.DataSheet4U.com NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS −20 V RDS(on) MAX 145 mW @ −4.5 V 200 mW @ −2.5 V ID MAX −2.5 A Applications Li−Ion Battery Charging Load Switch / Power Switching DC to DC Conversion Portable Devices like PDA’s, Cellular Phones, and Hard Drives S1 G1 G2 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 1.3 −1.6 −1.2 0.56 ±7.0 −55 to 150 −0.8 260 W A °C A °C S2 G2 2 3 5 4 S1 D2 G1 1 6 D1 A Symbol VDSS VGS ID Value −20 ±12 −2.3 −1.6 −2.5 1.1 W 1 TSOP6 CASE 318G SC MG G Unit V V A D1 P−CHANNEL MOSFET D2 P−CHANNEL MOSFET MARKING DIAGRAM SC = Specific Device Code 1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may ...