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NTLJF3118N Dataheets PDF



Part Number NTLJF3118N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET and Schottky Diode
Datasheet NTLJF3118N DatasheetNTLJF3118N Datasheet (PDF)

NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction • Footprint Same as SC−88 Package • 1.8 V VGS Rated RDS(on) • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • Low VF 2 A Schottky Diode • This is a Pb−Free Device Applications • DC−DC Boost/Buck Converter • Low Voltage Hard Disk DC Power Source MAXIMUM RATINGS (TJ = 25°C u.

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NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction • Footprint Same as SC−88 Package • 1.8 V VGS Rated RDS(on) • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • Low VF 2 A Schottky Diode • This is a Pb−Free Device Applications • DC−DC Boost/Buck Converter • Low Voltage Hard Disk DC Power Source MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current Steady TA = 25°C ID (Note 1) State TA = 85°C 3.8 A 2.8 t ≤ 5 s TA = 25°C 4.6 Power Dissipation (Note 1) Steady PD State TA = 25°C t ≤5 s 1.5 W 2.2 Continuous Drain Current TA = 25°C ID (Note 2) Steady TA = 85°C Power Dissipation (Note 2) State TA = 25°C PD 2.6 A 1.9 0.7 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM TJ, TSTG IS TL 18 A −55 to °C 150 1.8 A 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 1 August, 2016 − Rev. 2 www.onsemi.com V(BR)DSS 20 V MOSFET RDS(on) Max 65 mW @ 4.5 V 85 mW @ 2.5 V 120 mW @ 1.8 V VR Max 20 V SCHOTTKY DIODE VF Typ 0.41 V ID Max 3.8 A 2.0 A 1.7 A IF Max 2.0 A D A G S N−CHANNEL MOSFET K SCHOTTKY DIODE 1 WDFN6 CASE 506AN MARKING DIAGRAM 1 6 2 JK M G 5 3 G4 JK = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS A1 K 6K N/C 2 D3 5G D 4S (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Publication Order Number: NTLJF3118N/D NTLJF3118N SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current IF 2.0 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 83 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 58 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz].


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