Document
NTLJF3118N
Power MOSFET and Schottky Diode
20 V, 4.6 A, N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
Features
• WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package • 1.8 V VGS Rated RDS(on) • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • Low VF 2 A Schottky Diode • This is a Pb−Free Device
Applications
• DC−DC Boost/Buck Converter • Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12 V
Continuous Drain Current Steady TA = 25°C
ID
(Note 1)
State TA = 85°C
3.8
A
2.8
t ≤ 5 s TA = 25°C
4.6
Power Dissipation (Note 1)
Steady
PD
State TA = 25°C
t ≤5 s
1.5 W 2.2
Continuous Drain Current
TA = 25°C
ID
(Note 2)
Steady TA = 85°C
Power Dissipation (Note 2)
State TA = 25°C
PD
2.6
A
1.9
0.7
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IDM TJ, TSTG IS TL
18
A
−55 to °C 150
1.8
A
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 2 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2007
1
August, 2016 − Rev. 2
www.onsemi.com
V(BR)DSS 20 V
MOSFET RDS(on) Max 65 mW @ 4.5 V 85 mW @ 2.5 V 120 mW @ 1.8 V
VR Max 20 V
SCHOTTKY DIODE
VF Typ 0.41 V
ID Max 3.8 A 2.0 A 1.7 A
IF Max 2.0 A
D
A
G
S N−CHANNEL MOSFET
K SCHOTTKY DIODE
1 WDFN6 CASE 506AN
MARKING DIAGRAM
1
6
2 JK M G 5
3 G4
JK
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K 6K
N/C 2 D3
5G D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
Publication Order Number: NTLJF3118N/D
NTLJF3118N
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
20
V
DC Blocking Voltage
VR
20
V
Average Rectified Forward Current
IF
2.0
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
83
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
58
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
177
3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz].