Document
NUF2220XV6
2 Line EMI Filter with ESD Protection
This device is a 2 line EMI filter array for wireless applications. Greater than −20 dB attenuation is obtained at frequencies from 800 MHz to 2.4 GHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all capacitors.
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Features
• EMI Filtering and ESD Protection
• Integration of 10 Discrete Components
• Compliance with IEC61000−4−2 (Level 4)
> 8.0 kV (Contact)
• SOT−563 Package
• Moisture Sensitivity Level 1
• ESD Ratings:
Machine Model = C
Human Body Model = 3B
• These are Pb−Free Devices
Pin 6
Pin 5
Pin 4
Output(1) GND Output(2)
Pin 1 Input(1)
Pin 2 GND
Pin 3 Input(2)
Benefits
• Reduces EMI/RFI Emissions on a Data Line • Integrated Solution Offers Cost and Space Savings in a
SOT−563 Package
• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
Filter Response
• Integrated Solution Improves System Reliability
Applications
• EMI Filtering and ESD Protection for Data Lines • Wireless Phones • PDAs and Handheld Products • Notebook Computers • LCD Displays
MARKING DIAGRAM
6 1
SOT−563 CASE 463A
20 M G G
1
20 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NUF2220XV6T1 SOT−563 4000/Tape & Reel
NUF2220XV6T1G SOT−563 4000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
July, 2005 − Rev.2
Publication Order Number: NUF2220XV6/D
NUF2220XV6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
VPP Air Discharge
Contact Discharge
kV 15 8.0
Steady−State Power per Resistor
PR
mW
Steady−State Power per Package
PT
mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
V
Leakage Current
IR
VRWM = 3.0 V
1.0
mA
Resistance
RA
IR = 20 mA
85
100
115
W
Capacitance (Notes 1 and 2)
Cd
VR = 2.5 V, f = 1.0 MHz
7.0
pF
Cut−Off Frequency (Note 3)
f3dB
Above this frequency,
275
appreciable attenuation occurs
MHz
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz. 2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.
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S21 (dB) NORMALIZED CAPACITANCE
NUF2220XV6
0
2
−5
1.5
−10
−15
1
−20
0.5
−25
−30 1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (MHz)
1.E+10
Figure 1. Insertion Loss Characteristic (50 W Source and 50 W Lead Termination)
0
0
1
2
3
4
5
REVERSE VOLTAGE (V)
Figure 2. Typical Capacitance vs. Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
RESISTANCE (W)
110
108
106 104
102
100
98
96 94
92
90
−40
−20
0
20
40
TEMPERATURE (°C)
60
80
Figure 3. Typical Resistance over Temperature
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